Program
Important Dates
- March 2(Tue.)-June 18(Fri.) Abstract Submission
- July 5(Mon.) Acceptance Notification
- June 21(Mon.)-August 27(Fri.) Early Registration
- September 6(Mon.) Final Program Announcement
Keynote Speaker
Program Speakers Keynote SpeakerTS1. Synthesis, Assembly, & Functionalization of 2D
Byung Hee Hong
Seoul National University, Korea
Seoul National University, Korea
Update Soon
Curriculum VitaeCurriculum Vitae
Kian Ping Loh
National University of Singapore, Singapore
National University of Singapore, Singapore
Update Soon
Curriculum VitaeCurriculum Vitae
Manish Chhowalla
University of Cambridge, UK
University of Cambridge, UK
Curriculum Vitae
Curriculum Vitae
Paolo Samori
Strasbourg University, France
Strasbourg University, France
Update Soon
Curriculum VitaeCurriculum Vitae
TS2. Energy, Environment & Nanocomposites Application
Chun Wei Chen
National Taiwan University, Taiwan
National Taiwan University, Taiwan
Applications of 2D materials for Photovoltaics and Solar-to-Fuel conversions
Curriculum VitaeCurriculum Vitae
EDUCATION
Cambridge University, U.K. Ph.D Electrical Engineering 1998
Cambridge University, U.K. MS Physics 1995
National Taiwan University, Taiwan BS Electrical Engineering 1993
PROFESSIONAL ACTIVITIES
• 2017~ Director, International Graduate Program of Molecular Science and Technology, National Taiwan University (NTU-MST)
• 2014~ Distinguished Professor, Department of Materials Science and Engineering, National Taiwan University , Taiwan
• 2009~2014 Professor, Department of Materials Science and Engineering, National Taiwan University , Taiwan
• 2005-2009 Associate Professor, Department of Materials Science and Engineering, National Taiwan University , Taiwan
• 2002-2005 Assistant Professor, Department of Materials Science and Engineering, National Taiwan University , Taiwan
• 2001-2002 Assistant Professor, Yun-Ze University (2001-2002), Taiwan
AWARD AND HONORS
(2017) Outstanding Scholar Awards, Foundation for the Advancement of Outstanding Scholarship
(2015) Outstanding Research Awards, Minister of Science and Technology (MOST) ,Taiwan
(2013) Y. Z. Hsu Scientific Paper Award
(2011) Outstanding Research Awards, National Science Council (NSC),Taiwan
(2011) Young Investigator Awards, National Science Council (NSC),Taiwan
(2005) Ssu-nien Fu Research Award
MAIN SCIENTIFIC PUBLICATION
• “Atomic-layer Controlled Interfacial Band Engineering at Two-dimensional Layered PtSe2/Si Heterojunctions for Efficient Photoelectrochemical Hydrogen Production”
ACS Nano, 15,4627,2021
• ”Creation of three-dimensional textured graphene/Si Schottky junction photocathode for enhanced photoelectrochemical efficiency and stability”, Advanced Energy Materials, 1901022, (2019)
• “ Low Threshold Lasing from 2D Homologous Organic-Inorganic Hybrid Ruddlesden-Popper Perovskite Single-Crystals”, Nano Letters,18,3221, (2018)
• “ Self-assembly atomic stacking transport layer of two-dimensional layered titania for perovskite solar cells with extended UV stability”, Advanced Energy Materials, 1701722, (2018)
• “Spatially-resolved imaging on photocarrier generations and band alignments at perovskite/PbI2 hetero-interfaces of perovskite solar cells by light-modulated scanning tunneling microscopy”, Nano Letters, 17, 1154, (2017)
• "Intermixing-seeded growth for high-performance planar heterojunction perovskite solar cells assisted by precursor-capped nanoparticles ", Energy & Environmental Science, 9, 1282-1289 (2016)
• "Precisely-controlled ultrastrong photoinduced doping at graphene-heterostructures assisted by trap-state-mediated charge transfer ", Advanced Materials, 27, 7809, (2016)
• "Sunlight-Activated Graphene-Heterostructure Transparent Cathodes: Enabling High-Performance n-Graphene/p-Si Schottky Junction Photovoltaics ", Energy & Environmental Science,8, 2085, (2015)
• "Self-Crack-Filled Graphene Films by Metallic Nanoparticles for High-Performance Graphene Heterojunction Solar Cells", Advanced Materials 27(10), 1724, (2015)
RESEARCH INTERESTS
• Two dimensional materials for energy conversion.
• 2D/3D Organic-inorganic halide perovskites
• Novel energy materials
Cambridge University, U.K. Ph.D Electrical Engineering 1998
Cambridge University, U.K. MS Physics 1995
National Taiwan University, Taiwan BS Electrical Engineering 1993
PROFESSIONAL ACTIVITIES
• 2017~ Director, International Graduate Program of Molecular Science and Technology, National Taiwan University (NTU-MST)
• 2014~ Distinguished Professor, Department of Materials Science and Engineering, National Taiwan University , Taiwan
• 2009~2014 Professor, Department of Materials Science and Engineering, National Taiwan University , Taiwan
• 2005-2009 Associate Professor, Department of Materials Science and Engineering, National Taiwan University , Taiwan
• 2002-2005 Assistant Professor, Department of Materials Science and Engineering, National Taiwan University , Taiwan
• 2001-2002 Assistant Professor, Yun-Ze University (2001-2002), Taiwan
AWARD AND HONORS
(2017) Outstanding Scholar Awards, Foundation for the Advancement of Outstanding Scholarship
(2015) Outstanding Research Awards, Minister of Science and Technology (MOST) ,Taiwan
(2013) Y. Z. Hsu Scientific Paper Award
(2011) Outstanding Research Awards, National Science Council (NSC),Taiwan
(2011) Young Investigator Awards, National Science Council (NSC),Taiwan
(2005) Ssu-nien Fu Research Award
MAIN SCIENTIFIC PUBLICATION
• “Atomic-layer Controlled Interfacial Band Engineering at Two-dimensional Layered PtSe2/Si Heterojunctions for Efficient Photoelectrochemical Hydrogen Production”
ACS Nano, 15,4627,2021
• ”Creation of three-dimensional textured graphene/Si Schottky junction photocathode for enhanced photoelectrochemical efficiency and stability”, Advanced Energy Materials, 1901022, (2019)
• “ Low Threshold Lasing from 2D Homologous Organic-Inorganic Hybrid Ruddlesden-Popper Perovskite Single-Crystals”, Nano Letters,18,3221, (2018)
• “ Self-assembly atomic stacking transport layer of two-dimensional layered titania for perovskite solar cells with extended UV stability”, Advanced Energy Materials, 1701722, (2018)
• “Spatially-resolved imaging on photocarrier generations and band alignments at perovskite/PbI2 hetero-interfaces of perovskite solar cells by light-modulated scanning tunneling microscopy”, Nano Letters, 17, 1154, (2017)
• "Intermixing-seeded growth for high-performance planar heterojunction perovskite solar cells assisted by precursor-capped nanoparticles ", Energy & Environmental Science, 9, 1282-1289 (2016)
• "Precisely-controlled ultrastrong photoinduced doping at graphene-heterostructures assisted by trap-state-mediated charge transfer ", Advanced Materials, 27, 7809, (2016)
• "Sunlight-Activated Graphene-Heterostructure Transparent Cathodes: Enabling High-Performance n-Graphene/p-Si Schottky Junction Photovoltaics ", Energy & Environmental Science,8, 2085, (2015)
• "Self-Crack-Filled Graphene Films by Metallic Nanoparticles for High-Performance Graphene Heterojunction Solar Cells", Advanced Materials 27(10), 1724, (2015)
RESEARCH INTERESTS
• Two dimensional materials for energy conversion.
• 2D/3D Organic-inorganic halide perovskites
• Novel energy materials
Hui Ming Cheng
Chinese Academy of Sciences, China
Chinese Academy of Sciences, China
Fabrication and Thermal Transport Applications of 2D Material Membranes
Curriculum VitaeCurriculum Vitae
EDUCATION
Institute of Metal Research, CAS Ph.D Metallic Materials 1992
Institute of Metal Research, CAS MS Inorganic Materials 1987
Hunan University, Changsha, China BS Carbon Materials 1984
PROFESSIONAL ACTIVITIES
• Honorary Dean, School of Materials Science and Engineering, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences (April 2021 to Present)
• Director, Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences (April 2021 to Present)
• Executive Director, Shenzhen Geim Graphene Center, Shenzhen International Graduate School, Tsinghua University (Dec. 2017 to Present)
• Director, Low-Dimensional Materials and Devices Lab, Shenzhen International Graduate School, Tsinghua University (June 2016 to Present)
• Director, Advanced Carbon Division, Shenyang National Lab for Materials Science, Institute of Metal Research, Chinese Academy of Sciences (May 2001 to Present)
AWARD AND HONORS
• State Natural Science Award of China in 2006 and 2017
• Charles E. Pettinos Award from American Carbon Society
• Felcht Award from SGL, Germany
• ACS Nano Lecture Award from American Chemical Society
MAIN SCIENTIFIC PUBLICATION
• >750 papers with an H index of 139.
RESEARCH INTERESTS
• Carbon nanotubes
• Graphene
• 2D materials
• Energy storage and conversion materials and devices
• Photocatalytic materials and devices
• Advanced carbon materials
Institute of Metal Research, CAS Ph.D Metallic Materials 1992
Institute of Metal Research, CAS MS Inorganic Materials 1987
Hunan University, Changsha, China BS Carbon Materials 1984
PROFESSIONAL ACTIVITIES
• Honorary Dean, School of Materials Science and Engineering, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences (April 2021 to Present)
• Director, Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences (April 2021 to Present)
• Executive Director, Shenzhen Geim Graphene Center, Shenzhen International Graduate School, Tsinghua University (Dec. 2017 to Present)
• Director, Low-Dimensional Materials and Devices Lab, Shenzhen International Graduate School, Tsinghua University (June 2016 to Present)
• Director, Advanced Carbon Division, Shenyang National Lab for Materials Science, Institute of Metal Research, Chinese Academy of Sciences (May 2001 to Present)
AWARD AND HONORS
• State Natural Science Award of China in 2006 and 2017
• Charles E. Pettinos Award from American Carbon Society
• Felcht Award from SGL, Germany
• ACS Nano Lecture Award from American Chemical Society
MAIN SCIENTIFIC PUBLICATION
• >750 papers with an H index of 139.
RESEARCH INTERESTS
• Carbon nanotubes
• Graphene
• 2D materials
• Energy storage and conversion materials and devices
• Photocatalytic materials and devices
• Advanced carbon materials
Sang-Woo Kim
Sungkyunkwan University, Korea
Sungkyunkwan University, Korea
Update Soon
Curriculum VitaeCurriculum Vitae
TS3. Electronics, Optoelectronics & Other Devices
Lain-Jong Li
University of Hong Kong, Taiwan
University of Hong Kong, Taiwan
Two-Dimensional Materials for Future Electronics
Curriculum VitaeCurriculum Vitae
EDUCATION
University of Oxford Ph.D Physics 2006
National Taiwan University MS Chemistry 1996
National Taiwan University BS Chemistry 1994
PROFESSIONAL ACTIVITIES
• Director, Corporate Research in Taiwan Semiconductor Manufacturing Company (Dec2017-Dec2020)
• Adjunct SHARP Professor, University of New South Wales (Sep2018-Dec2020)
• Full Professor, King Abdullah University of Sci. and Tech. (Aug 2016 – Dec2017)
• Associate Professor, King Abdullah University of Sci. and Tech. (Aug 2014 –Jul 2016)
• Associate Research Fellow, Academia Sinica Taiwan (Feb 2010 – Apr 2014)
• Assistant Professor, Nanyang Tech. Univ. Singapore (Jun 2006 – Dec 2009)
AWARD AND HONORS
• Highly cited Scholar (Clarivate) 2018 in Physics and 2019, 2020 in Materials.
• Universal Scientific Education and Research Network (USERN) advisory board member and 1% top scientist /2017
• Wu Ta Yu Awards (NSC, Taiwan) / 2013
• Asian Rising Star (15th Asian Chemical Congress, Singapore) / 2013
• Academia Sinica Research Award (Taiwan) / 2013
• Humboldt Research Fellowship for Experienced Researchers (Germany) / 2011
• Career Development Award (Academia Sinica, Taiwain) / 2010
MAIN SCIENTIFIC PUBLICATION
• T.-A. Chen et al. Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111). Nature 579, 219 (2020).
• M.-Y. Li et al. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface. Science 349, 524 (2015)
• Areej Aljarb et al. Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides. Nature Mater. 19, 1300 (2020)
• P.J Shen et al, Ultralow contact resistance between semimetal and monolayer semiconductors. Nature 593, 211 (2021)
• A. Y. LU et al. Janus monolayers of transition metal dichalcogenides. Nature Nanotech. 12, 744 (2017)
RESEARCH INTERESTS
Two-dimensional materials such as boron nitrides, transition metal dichalcogenides etc. hold tremendous promises in replacing Si as the transistor materials for manufacturing compact and low-energy-consuming nanodevices. However, the major bottlenecks that prevent their integration with micro/nanoelectronics technologies are the lack of (1) reproducible approach for growing wafer-scale single-crystalline and low-defect-density 2D layers, (2) reliable layer transfer method which does not induce defects, and (3) systematic exploration of appropriate process integration. His research is primarily focusing on solving these grand challenges for extending the Moore’s Law and realizing high-performance future electronics.
University of Oxford Ph.D Physics 2006
National Taiwan University MS Chemistry 1996
National Taiwan University BS Chemistry 1994
PROFESSIONAL ACTIVITIES
• Director, Corporate Research in Taiwan Semiconductor Manufacturing Company (Dec2017-Dec2020)
• Adjunct SHARP Professor, University of New South Wales (Sep2018-Dec2020)
• Full Professor, King Abdullah University of Sci. and Tech. (Aug 2016 – Dec2017)
• Associate Professor, King Abdullah University of Sci. and Tech. (Aug 2014 –Jul 2016)
• Associate Research Fellow, Academia Sinica Taiwan (Feb 2010 – Apr 2014)
• Assistant Professor, Nanyang Tech. Univ. Singapore (Jun 2006 – Dec 2009)
AWARD AND HONORS
• Highly cited Scholar (Clarivate) 2018 in Physics and 2019, 2020 in Materials.
• Universal Scientific Education and Research Network (USERN) advisory board member and 1% top scientist /2017
• Wu Ta Yu Awards (NSC, Taiwan) / 2013
• Asian Rising Star (15th Asian Chemical Congress, Singapore) / 2013
• Academia Sinica Research Award (Taiwan) / 2013
• Humboldt Research Fellowship for Experienced Researchers (Germany) / 2011
• Career Development Award (Academia Sinica, Taiwain) / 2010
MAIN SCIENTIFIC PUBLICATION
• T.-A. Chen et al. Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111). Nature 579, 219 (2020).
• M.-Y. Li et al. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface. Science 349, 524 (2015)
• Areej Aljarb et al. Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides. Nature Mater. 19, 1300 (2020)
• P.J Shen et al, Ultralow contact resistance between semimetal and monolayer semiconductors. Nature 593, 211 (2021)
• A. Y. LU et al. Janus monolayers of transition metal dichalcogenides. Nature Nanotech. 12, 744 (2017)
RESEARCH INTERESTS
Two-dimensional materials such as boron nitrides, transition metal dichalcogenides etc. hold tremendous promises in replacing Si as the transistor materials for manufacturing compact and low-energy-consuming nanodevices. However, the major bottlenecks that prevent their integration with micro/nanoelectronics technologies are the lack of (1) reproducible approach for growing wafer-scale single-crystalline and low-defect-density 2D layers, (2) reliable layer transfer method which does not induce defects, and (3) systematic exploration of appropriate process integration. His research is primarily focusing on solving these grand challenges for extending the Moore’s Law and realizing high-performance future electronics.
Seongjun Park
Samsung Advanced Institute of Technology, Korea
Samsung Advanced Institute of Technology, Korea
Commercialization of 2D materials in semi-conductor
Curriculum VitaeCurriculum Vitae
EDUCATION
Stanford University Ph.D. Chemical Engineering 2003
Stanford University MS Chemical Engineering 1999
Seoul National University BS Chemical Engineering 1994
PROFESSIONAL ACTIVITIES
• Senior Vice President/Vice President and Head of Lab, Inorganic Material Lab, Samsung Advanced Institute of Technology, Republic of Korea, Dec 2018 to Present
• Vice President and Head of Lab, Nano Electronics Lab/Device Lab, Samsung Advanced Institute of Technology, Republic of Korea, Dec 2015 to Dec 2018
• Vice President and Project Leader of Graphene, Device Lab, Samsung Advanced Institute of Technology, Republic of Korea, Dec 2013 to Dec 2015
• Research Staff Member and Project Leader of Graphene, Frontier Research Lab, Samsung Advanced Institute of Technology, Republic of Korea, Jul 2010 to Dec 2013
• Senior Software Engineer, Design & Technology Solutions, Technology Manufacturing Group, Intel Corp., Aug 2005 to Jun 2010
• Research Associate, Mechanical Engineering, Stanford University, Jul 2003 to Aug 2005
AWARD AND HONORS
• Infinite Research Award, “Graphene Interconnect”, SAIT Samsung Electronics, July 2014
• Nano Korea Symposium Award, Secretary Award for “The contribution on Nano research”, from the Ministry of Science, ICT and Future Planning July 2014
• Samsung Best Paper Award, Grand Award for “Graphene Barristor, a triode device with a gate controlled Schottky Barrier,”, Samsung Electronics Dec 2012
• Infinite Research Award, for “Graphene Device”, SAIT, Samsung Electronics Jul 2012
• Department recognition award for “Demonstrating a new liner material that reduce Copper interconnect resistivity of 100 nm line width and below” from TMG/DTS, Intel
MAIN SCIENTIFIC PUBLICATION
• Y Liu, X Duan, H-J Shin, S Park, Y Huang, X Duan, “Promises and Prospects of Two Dimensional Transistors”, Nature 591, 43-53 (2021)
• H Jang, C Liu, H Hinton, M-H Lee, H Kim, M Seol, H-J Shin, S Park*, D Ham*, “An atomically Thin Optoelectronic Machine Vision Processor”, Advanced Materials 32, 2002431 (2020)
• M-H Lee, Y Cho, K-E Byun, K W Shin, S Nam, C Kim, H Kim, S-A Han, S-W Kim, H-J Shin*, S Park, “Two-Dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor Device Contacts”, Nano Letters 18, 4878, (2018)
• C S Lee, K W Shin, H J Song, H Park, Y Cho, D-H Im, H Lee, J Lee, J Y Won, J Chung, C Kim, K-E Byun, E-K Lee, Y Kim, W Ko, H J Lim, H J Lim, S Park, S-J Shin*, “Fabrication of Metal/Graphene Hybrid Interconnects by Direct Graphene Growth and Their Integration Properties”, Advanced Electronic Materials 4, 1700624 (2018)
• Y Oh, J Lee, J Park, H Kwon, I Jeon, S W Kim, G Kim, S Park*, S W Hwang, “Electric Filed Effect on the Electronic Structure of 2D Y2C Electride”, 2D Materials 5, 035005 (2018)
• M Seol, S Kim, Y Cho, K-E Byun, H Kim, J Kim, S K Kim, S-W Kim, H-J Shin*, S Park, “Triboelectric Series of 2D Layered Materials”, Advanced Materials 30, 1801210 (2018)
• S Park*, “The Puzzle of Graphene Commercialization”, Nature Reviews Materials 1, 16085 (2016)
• S Park, J Lee, H S Kim, J-B Park, K H Lee, S A Han, S Hwang, S-W Kim, H-J Shin*, “Formation of Hexagonal Boron Nitride by Metal Atomic Vacancy-Assisted B-N Molecular Diffusion”, ACS Nano 9, 633 (2015)
• J Heo, K-E Byun, J Lee, H-J Chung, S Jeon, S Park*, S W Hwang, “Graphene and Thin Film Semiconductor Heterojunction Transistors Integrated on Wafer Scale for Low Power Electronics”, Nano Letters 13, 5967 (2013)
• K-E Byun, H-J Chung, J Lee, H Yang, H J Song, J Heo, D H Seo, S Park*, S W Hwang, I Yoo, K Kim, “Graphene for True Ohmic Contact at Metal-Semiconductor Junctions”, Nano Letters 13, 4001 (2013)
• H Yang, J Heo, S Park, H J Song, D H Seo, K-E Byun, P Kim, I Yoo, H-J Chung*, K Kim, “Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier”, Science 336, 1140 (2012)
• S Park, L Colombo, Y Nishi, K Cho*, “Ab initio Study of Metal Gate Electrode Work Function”, Applied Physics Letters 86, 073118 (2005)
RESEARCH INTERESTS
• Thin film studies for semiconductor devices: DRAM, VNAND, PRAM, MRAM, RRAM, Ultra Low k, Hf-based ferroelectric materials, Oxide semiconductor, Graphene and 2D
• Materials for Display: Quantum Dot (QD) synthesis and its applications
• Materials for Multi-Layer Ceramic Capacitor (MLCC)
Stanford University Ph.D. Chemical Engineering 2003
Stanford University MS Chemical Engineering 1999
Seoul National University BS Chemical Engineering 1994
PROFESSIONAL ACTIVITIES
• Senior Vice President/Vice President and Head of Lab, Inorganic Material Lab, Samsung Advanced Institute of Technology, Republic of Korea, Dec 2018 to Present
• Vice President and Head of Lab, Nano Electronics Lab/Device Lab, Samsung Advanced Institute of Technology, Republic of Korea, Dec 2015 to Dec 2018
• Vice President and Project Leader of Graphene, Device Lab, Samsung Advanced Institute of Technology, Republic of Korea, Dec 2013 to Dec 2015
• Research Staff Member and Project Leader of Graphene, Frontier Research Lab, Samsung Advanced Institute of Technology, Republic of Korea, Jul 2010 to Dec 2013
• Senior Software Engineer, Design & Technology Solutions, Technology Manufacturing Group, Intel Corp., Aug 2005 to Jun 2010
• Research Associate, Mechanical Engineering, Stanford University, Jul 2003 to Aug 2005
AWARD AND HONORS
• Infinite Research Award, “Graphene Interconnect”, SAIT Samsung Electronics, July 2014
• Nano Korea Symposium Award, Secretary Award for “The contribution on Nano research”, from the Ministry of Science, ICT and Future Planning July 2014
• Samsung Best Paper Award, Grand Award for “Graphene Barristor, a triode device with a gate controlled Schottky Barrier,”, Samsung Electronics Dec 2012
• Infinite Research Award, for “Graphene Device”, SAIT, Samsung Electronics Jul 2012
• Department recognition award for “Demonstrating a new liner material that reduce Copper interconnect resistivity of 100 nm line width and below” from TMG/DTS, Intel
MAIN SCIENTIFIC PUBLICATION
• Y Liu, X Duan, H-J Shin, S Park, Y Huang, X Duan, “Promises and Prospects of Two Dimensional Transistors”, Nature 591, 43-53 (2021)
• H Jang, C Liu, H Hinton, M-H Lee, H Kim, M Seol, H-J Shin, S Park*, D Ham*, “An atomically Thin Optoelectronic Machine Vision Processor”, Advanced Materials 32, 2002431 (2020)
• M-H Lee, Y Cho, K-E Byun, K W Shin, S Nam, C Kim, H Kim, S-A Han, S-W Kim, H-J Shin*, S Park, “Two-Dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor Device Contacts”, Nano Letters 18, 4878, (2018)
• C S Lee, K W Shin, H J Song, H Park, Y Cho, D-H Im, H Lee, J Lee, J Y Won, J Chung, C Kim, K-E Byun, E-K Lee, Y Kim, W Ko, H J Lim, H J Lim, S Park, S-J Shin*, “Fabrication of Metal/Graphene Hybrid Interconnects by Direct Graphene Growth and Their Integration Properties”, Advanced Electronic Materials 4, 1700624 (2018)
• Y Oh, J Lee, J Park, H Kwon, I Jeon, S W Kim, G Kim, S Park*, S W Hwang, “Electric Filed Effect on the Electronic Structure of 2D Y2C Electride”, 2D Materials 5, 035005 (2018)
• M Seol, S Kim, Y Cho, K-E Byun, H Kim, J Kim, S K Kim, S-W Kim, H-J Shin*, S Park, “Triboelectric Series of 2D Layered Materials”, Advanced Materials 30, 1801210 (2018)
• S Park*, “The Puzzle of Graphene Commercialization”, Nature Reviews Materials 1, 16085 (2016)
• S Park, J Lee, H S Kim, J-B Park, K H Lee, S A Han, S Hwang, S-W Kim, H-J Shin*, “Formation of Hexagonal Boron Nitride by Metal Atomic Vacancy-Assisted B-N Molecular Diffusion”, ACS Nano 9, 633 (2015)
• J Heo, K-E Byun, J Lee, H-J Chung, S Jeon, S Park*, S W Hwang, “Graphene and Thin Film Semiconductor Heterojunction Transistors Integrated on Wafer Scale for Low Power Electronics”, Nano Letters 13, 5967 (2013)
• K-E Byun, H-J Chung, J Lee, H Yang, H J Song, J Heo, D H Seo, S Park*, S W Hwang, I Yoo, K Kim, “Graphene for True Ohmic Contact at Metal-Semiconductor Junctions”, Nano Letters 13, 4001 (2013)
• H Yang, J Heo, S Park, H J Song, D H Seo, K-E Byun, P Kim, I Yoo, H-J Chung*, K Kim, “Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier”, Science 336, 1140 (2012)
• S Park, L Colombo, Y Nishi, K Cho*, “Ab initio Study of Metal Gate Electrode Work Function”, Applied Physics Letters 86, 073118 (2005)
RESEARCH INTERESTS
• Thin film studies for semiconductor devices: DRAM, VNAND, PRAM, MRAM, RRAM, Ultra Low k, Hf-based ferroelectric materials, Oxide semiconductor, Graphene and 2D
• Materials for Display: Quantum Dot (QD) synthesis and its applications
• Materials for Multi-Layer Ceramic Capacitor (MLCC)
Yury Gogotsi
Drexel University , USA
Drexel University , USA
MXenes – Enabling 2D Materials for the Future Technologies
Curriculum VitaeCurriculum Vitae
EDUCATION
Kiev Polytechnic Institute Ph.D Physical Chemistry 1986
Kiev Polytechnic Institute BS/MS Metallurgy 1984
PROFESSIONAL ACTIVITIES
• Drexel University, Department of Materials Science and Engineering
• 05/2017 – present Charles T. and Ruth M. Bach Endowed Professor
• 10/2010 – present Distinguished University Professor
• 09/2008 – 04/2017 Trustee Chair Professor of Materials Science and Engineering
• 02/2003 – present Director, A.J. Drexel Nanomaterials Institute (DNI)
• 09/2002 – present Professor of Chemistry (courtesy appointment)
• 12/2002 – 09/2007 Associate Dean of the College of Engineering
• 11/2001 – present Professor of Mechanical Engng. and Mechanics (by courtesy)
• 08/2000 –08/2008 Professor of Materials Science and Engineering
AWARD AND HONORS
• 2021 Ceramic Prize, The World Academy of Ceramics (given once every 4 years)
• 2021 ACS Award in the Chemistry of Materials
• 2020 George Gamow Award from (RASA)
• 2019 Fellow, European Academy of Sciences (EurASc)
• 2019 Sosman Lecture, American Ceramic Society
• 2018 Citations Laureate (Web of Science) - work is deemed to be of Nobel stature
• 2015 RUSNANOPRIZE (International Nanotechnology Prize)
• 2012 European Carbon Association Award
• 2011 NANOSMAT Prize at the 6th NANOSMAT Conference
• 2011 ASM International Philadelphia Chapter Albert Sauveur Lecture Award
• 2004 Academician, World Academy of Ceramics
• 2002 S. Somiya Award, the International Union of Materials Research Societies
MAIN SCIENTIFIC PUBLICATIONS
• K. Hantanasirisakul, Y. Gogotsi, Electronic and Optical Properties of 2D Transition Metal Carbides and Nitrides (MXenes), Advanced Materials, 30 (52) 1804779 (2018) (Invited Review, Hall of Fame article)
• X. Xiao, H. Wang, P. Urbankowski, Y. Gogotsi, Topochemical Synthesis of 2D Materials, Chemical Society Reviews, 47 (23) 8744 - 8765 (2018)
• A. Sarycheva, A. Polemi, Y. Liu, K. Dandekar, B. Anasori, Y. Gogotsi, 2D Titanium Carbide (MXene) for Wireless Communication, Science Advances, 4, eaau0920 (2018)
• M. R. Lukatskaya, O. Mashtalir, C. E. Ren, Y. Dall’Agnese, P. Rozier, P. L. Taberna, M. Naguib, P. Simon, M. W. Barsoum, Y. Gogotsi, Cation Intercalation and High Volumetric Capacitance of Two-dimensional Titanium Carbide, Science, 341, 1502-1505 (2013)
• Y. Xia, T. Mathis, M.-Q. Zhao, B. Anasori, A. Dang, Z. Zhou, H. Cho, Y. Gogotsi, S. Yang, Thickness Independent Capacitance of Vertically Aligned Liquid Crystalline MXenes, Nature, 557, 409–412 (2018)
• B. Anasori, M. R. Lukatskaya, Y. Gogotsi, 2D metal carbides and nitrides (MXenes) for energy storage, Nature Reviews Materials, 2, 16098 (2017)
• M. Ghidiu, M. R. Lukatskaya, M.-Q. Zhao, Y. Gogotsi, M. W. Barsoum, Conductive two-dimensional titanium carbide ‘clay’ with high volumetric capacitance, Nature, 516, 78–81 (2014)
• M. R. Lukatskaya, O. Mashtalir, C. E. Ren, Y. Dall’Agnese, P. Rozier, P. Louis Taberna, M. Naguib, P. Simon, M. W. Barsoum, Y. Gogotsi, Cation Intercalation and High Volumetric Capacitance of Two-dimensional Titanium Carbide, Science, 341, 1502-1505 (2013)
• M. Naguib, M. Kurtoglu, V. Presser, J. Lu, J.-J. Niu, M. Heon, L. Hultman, Y. Gogotsi, M. W. Barsoum, Two-Dimensional Nanocrystals Produced by Exfoliation of Ti3AlC2, Advanced Materials, 23 (37), 4248-4253 (2011) (Cover article)
RESEARCH INTERESTS
• His research group works on 2D carbides and nitrides (MXenes), nanostructured carbons, and other nanomaterials for energy, water and biomedical applications.
Kiev Polytechnic Institute Ph.D Physical Chemistry 1986
Kiev Polytechnic Institute BS/MS Metallurgy 1984
PROFESSIONAL ACTIVITIES
• Drexel University, Department of Materials Science and Engineering
• 05/2017 – present Charles T. and Ruth M. Bach Endowed Professor
• 10/2010 – present Distinguished University Professor
• 09/2008 – 04/2017 Trustee Chair Professor of Materials Science and Engineering
• 02/2003 – present Director, A.J. Drexel Nanomaterials Institute (DNI)
• 09/2002 – present Professor of Chemistry (courtesy appointment)
• 12/2002 – 09/2007 Associate Dean of the College of Engineering
• 11/2001 – present Professor of Mechanical Engng. and Mechanics (by courtesy)
• 08/2000 –08/2008 Professor of Materials Science and Engineering
AWARD AND HONORS
• 2021 Ceramic Prize, The World Academy of Ceramics (given once every 4 years)
• 2021 ACS Award in the Chemistry of Materials
• 2020 George Gamow Award from (RASA)
• 2019 Fellow, European Academy of Sciences (EurASc)
• 2019 Sosman Lecture, American Ceramic Society
• 2018 Citations Laureate (Web of Science) - work is deemed to be of Nobel stature
• 2015 RUSNANOPRIZE (International Nanotechnology Prize)
• 2012 European Carbon Association Award
• 2011 NANOSMAT Prize at the 6th NANOSMAT Conference
• 2011 ASM International Philadelphia Chapter Albert Sauveur Lecture Award
• 2004 Academician, World Academy of Ceramics
• 2002 S. Somiya Award, the International Union of Materials Research Societies
MAIN SCIENTIFIC PUBLICATIONS
• K. Hantanasirisakul, Y. Gogotsi, Electronic and Optical Properties of 2D Transition Metal Carbides and Nitrides (MXenes), Advanced Materials, 30 (52) 1804779 (2018) (Invited Review, Hall of Fame article)
• X. Xiao, H. Wang, P. Urbankowski, Y. Gogotsi, Topochemical Synthesis of 2D Materials, Chemical Society Reviews, 47 (23) 8744 - 8765 (2018)
• A. Sarycheva, A. Polemi, Y. Liu, K. Dandekar, B. Anasori, Y. Gogotsi, 2D Titanium Carbide (MXene) for Wireless Communication, Science Advances, 4, eaau0920 (2018)
• M. R. Lukatskaya, O. Mashtalir, C. E. Ren, Y. Dall’Agnese, P. Rozier, P. L. Taberna, M. Naguib, P. Simon, M. W. Barsoum, Y. Gogotsi, Cation Intercalation and High Volumetric Capacitance of Two-dimensional Titanium Carbide, Science, 341, 1502-1505 (2013)
• Y. Xia, T. Mathis, M.-Q. Zhao, B. Anasori, A. Dang, Z. Zhou, H. Cho, Y. Gogotsi, S. Yang, Thickness Independent Capacitance of Vertically Aligned Liquid Crystalline MXenes, Nature, 557, 409–412 (2018)
• B. Anasori, M. R. Lukatskaya, Y. Gogotsi, 2D metal carbides and nitrides (MXenes) for energy storage, Nature Reviews Materials, 2, 16098 (2017)
• M. Ghidiu, M. R. Lukatskaya, M.-Q. Zhao, Y. Gogotsi, M. W. Barsoum, Conductive two-dimensional titanium carbide ‘clay’ with high volumetric capacitance, Nature, 516, 78–81 (2014)
• M. R. Lukatskaya, O. Mashtalir, C. E. Ren, Y. Dall’Agnese, P. Rozier, P. Louis Taberna, M. Naguib, P. Simon, M. W. Barsoum, Y. Gogotsi, Cation Intercalation and High Volumetric Capacitance of Two-dimensional Titanium Carbide, Science, 341, 1502-1505 (2013)
• M. Naguib, M. Kurtoglu, V. Presser, J. Lu, J.-J. Niu, M. Heon, L. Hultman, Y. Gogotsi, M. W. Barsoum, Two-Dimensional Nanocrystals Produced by Exfoliation of Ti3AlC2, Advanced Materials, 23 (37), 4248-4253 (2011) (Cover article)
RESEARCH INTERESTS
• His research group works on 2D carbides and nitrides (MXenes), nanostructured carbons, and other nanomaterials for energy, water and biomedical applications.
TS4. 2D Crystal Sciences
Je-Geun Park
Seoul National University, Korea
Seoul National University, Korea
Strong correlation and discoveries in 2d magnetic van der Waals materials TMPS3
Curriculum VitaeCurriculum Vitae
EDUCATION
Imperial College, London Ph.D Physics 1993
Seoul National University MS Physics 1990
Seoul National University BS Physics 1988
PROFESSIONAL ACTIVITIES
• Section Editor, Journal of Physics: Condensed Matter, IOP (2015 to Present)
• Committee for Future Technology, Samsung Electronics Co., Ltd. (2015 – 2018)
• International Relation Official, Korean Physical Society (2015 – 2016)
• Chairman, Selection Committee-Physical Sciences, Samsung Foundation, (2014 – 2016)
• Organizer of Institute for Basic Science – Royal Society Joint Conferences (2014 – 2019)
• HANARO Advisory Committee, KAERI, Korea (2013 to Present)
AWARD AND HONORS
• Elected to Fellow of The Korean Academy of Science and Technology (2017)
• The Korea Science Prize, Korean Government (2016)
• KPS 2015 Research Prize of Korean Physical Society (2015)
• Minister Prize, Ministry of Science, ICT and Future Planning, Korean Government (2014)
• SKKU Fellow (Distinguished Professorship) Sungkyunkwan University, Korea (2009)
• Elected to Fellow of the Institute of Physics, UK (2008)
• LG Yonam Fellowship, Korea (2007)
MAIN SCIENTIFIC PUBLICATION
• S. Lee et al., Nature Materials 5, 471 (2006)
• S. Lee et al., Nature 451, 805 (2008)
• J. Jeong et al., Phys. Rev. Lett. 108, 077202 (2012)
• S, Oh et al., Phys. Rev. Lett. 111, 257202 (2013)
• J. Jeong et al., Phys. Rev. Lett. 113, 107202 (2014)
• J. Oh et al., Nature Communications 7, 13146 (2016)
• J. Lee et al., Nano Lett. 16, 7433 (2016)
• K. S. Burch, D. Mandrus, and J-G. Park, Nature 563, 47 (2018)
• K. Kim et al., Nature Communications 10, 345 (2019)
• S. Kang et al., Nature (in press)
RESEARCH INTERESTS
• Strongly correlated electron physics and materials
• Magnetism
• 2d magnetic van der Waals materials
• Neutron & X-ray scattering
Imperial College, London Ph.D Physics 1993
Seoul National University MS Physics 1990
Seoul National University BS Physics 1988
PROFESSIONAL ACTIVITIES
• Section Editor, Journal of Physics: Condensed Matter, IOP (2015 to Present)
• Committee for Future Technology, Samsung Electronics Co., Ltd. (2015 – 2018)
• International Relation Official, Korean Physical Society (2015 – 2016)
• Chairman, Selection Committee-Physical Sciences, Samsung Foundation, (2014 – 2016)
• Organizer of Institute for Basic Science – Royal Society Joint Conferences (2014 – 2019)
• HANARO Advisory Committee, KAERI, Korea (2013 to Present)
AWARD AND HONORS
• Elected to Fellow of The Korean Academy of Science and Technology (2017)
• The Korea Science Prize, Korean Government (2016)
• KPS 2015 Research Prize of Korean Physical Society (2015)
• Minister Prize, Ministry of Science, ICT and Future Planning, Korean Government (2014)
• SKKU Fellow (Distinguished Professorship) Sungkyunkwan University, Korea (2009)
• Elected to Fellow of the Institute of Physics, UK (2008)
• LG Yonam Fellowship, Korea (2007)
MAIN SCIENTIFIC PUBLICATION
• S. Lee et al., Nature Materials 5, 471 (2006)
• S. Lee et al., Nature 451, 805 (2008)
• J. Jeong et al., Phys. Rev. Lett. 108, 077202 (2012)
• S, Oh et al., Phys. Rev. Lett. 111, 257202 (2013)
• J. Jeong et al., Phys. Rev. Lett. 113, 107202 (2014)
• J. Oh et al., Nature Communications 7, 13146 (2016)
• J. Lee et al., Nano Lett. 16, 7433 (2016)
• K. S. Burch, D. Mandrus, and J-G. Park, Nature 563, 47 (2018)
• K. Kim et al., Nature Communications 10, 345 (2019)
• S. Kang et al., Nature (in press)
RESEARCH INTERESTS
• Strongly correlated electron physics and materials
• Magnetism
• 2d magnetic van der Waals materials
• Neutron & X-ray scattering
Kin Fai Mak
Cornell University, USA
Cornell University, USA
Semiconductor moiré 2.0
Curriculum VitaeCurriculum Vitae
EDUCATION
Columbia University Ph.D Physics 2010
HKUST BS Physics and Mathematics 2005
PROFESSIONAL ACTIVITIES
2019 – present Associate Professor of Physics and of Applied and Engineering Physics, Cornell University
2018 – 2019 Assistant Professor of Physics and of Applied and Engineering Physics, Cornell University
2014 – 2018 Assistant Professor of Physics, Pennsylvania State University
2012 – 2014 Kavli Postdoctoral Fellow, Kavli Institute at Cornell for Nanoscale Science, Cornell University
2010 – 2012 Postdoctoral Fellow, Nanoscale Science and Engineering Center, Columbia University
2005 – 2010 Graduate Research Assistant, Department of Physics, Columbia University
AWARD AND HONORS
• Presidential Early Career Awards for Scientists and Engineers, 2019
• ONR Young Investigator Award, 2018
• Alfred Sloan Research Fellowship, 2017
• OCPA Outstanding Young Researcher Award (Macronix Prize), 2016
• David and Lucile Packard Fellowship, 2016
• AFOSR Young Investigator Award, 2016
• DOE Early Career Award, 2015
• Young Scientist Prize in Quantum Electronics, International Union of Pure and Applied Physics (IUPAP), 2013
• Michelson Postdoctoral Prize Lectureship, Case Western Reserve University, 2012
MAIN SCIENTIFIC PUBLICATION
• L. Ma, P. X. Nguyen, Z. Wang, Y. Zeng, K. Watanabe, T. Taniguchi, A. H. MacDonald, K. F. Mak, & J. Shan, “Strongly correlated excitonic insulator in atomic double layers,” arXiv:2104.05066 (2021).
• T. Li, S. Jiang, T. Li, Y. Zhang, K. Kang, J. Zhu, K. Watanabe, T. Taniguchi, D. Chowdhury, L. Fu, J. Shan, & K. F. Mak, “Continuous Mott transition in semiconductor moiré superlattices,” arXiv:2103.09779 (2021).
• C. Jin, Z. Tao, T. Li, Y. Xu, Y. Tang, J. Zhu, S. Liu, K. Watanabe, T. Taniguchi, J. C. Hone, L. Fu, J. Shan, & K. F. Mak, “Stripe phases in WSe2/WS2 moiré superlattices,” Nature Mater. DOI:10.1038/s41563-021-00959-8 (2021).
• C. Jin, Z. Tao, K. Kang, K. Watanabe, T. Taniguchi, K. F. Mak, & J. Shan, “Imaging and control of critical fluctuations in two-dimensional magnets,” Nature Mater. 19, 1290-1294 (2020).
• Y. Xu, S. Liu, D. A. Rhodes, K. Watanabe, T. Taniguchi, J. C. Hone, V. Elser, K. F. Mak, & J. Shan, “Correlated insulating states at fractional fillings of moiré superlattices,” Nature 587, 214-218 (2020).
• Y. Tang, L. Li, T. Li, Y. Xu, S. Liu, K. Barmak, K. Watanabe, T. Taniguchi, A. H. MacDonald, J. Shan, & K. F. Mak, “Simulation of Hubbard model physics in WSe2/WS2 moiré superlattices,” Nature 579, 353-358 (2020).
• Z. Wang, D. A. Rhodes, K. Watanabe, T. Taniguchi, J. C. Hone, J. Shan, & K. F. Mak, “Evidence of high-temperature exciton condensation in 2D atomic double layers,” Nature 574, 76-80 (2019).
• K. Kang, T. Li, E. Sohn, J. Shan, & K. F. Mak, “Nonlinear anomalous Hall effect in few-layer WTe2,” Nature Mater. 18, 324-328 (2019).
• S. Jiang, L. Li, Z. Wang, K. F. Mak, & J. Shan, “Controlling magnetism in 2D CrI3 by electrostatic doping,” Nature Nanotech. 13, 549-553 (2018).
• E. Sohn, X. Xi, W. He, S. Jiang, Z. Wang, K. Kang, J.-H. Park, H. Berger, L. Forró, K. T. Law, J. Shan, & K. F. Mak, “An unusual continuous paramagnetic-limited superconducting phase transition in 2D NbSe2,” Nature Mater. 17, 504-508 (2018).
• S. Jiang, J. Shan, & K. F. Mak, “Electric-field switching of two-dimensional van der Waals magnets,” Nature Mater. 17, 406-410 (2018).
• Z. Wang, J. Shan, & K. F. Mak, “Valley- and spin-polarized Landau levels in monolayer WSe2,” Nature Nanotech. 12, 144-149 (2017).
• J. Lee, K. F. Mak, & J. Shan, “Electrical control of the valley Hall effect in bilayer MoS2 transistors,” Nature Nanotech. 11, 421-425 (2016).
• X. Xi, Z. Wang, W. Zhao, J.-H. Park, K. T. Law, H. Berger, L. Forró, J. Shan, & K. F. Mak, “Ising pairing in superconducting NbSe2 atomic layers,” Nature Phys. 12, 139-143 (2016).
RESEARCH INTERESTS
• Two-dimensional quantum materials and heterostructures
• Spectroscopy
• Exciton physics
• Strong correlation physics
• Berry curvature effects on optical and electrical phenomena
• Magnetism
• Unconventional superconductivity
Columbia University Ph.D Physics 2010
HKUST BS Physics and Mathematics 2005
PROFESSIONAL ACTIVITIES
2019 – present Associate Professor of Physics and of Applied and Engineering Physics, Cornell University
2018 – 2019 Assistant Professor of Physics and of Applied and Engineering Physics, Cornell University
2014 – 2018 Assistant Professor of Physics, Pennsylvania State University
2012 – 2014 Kavli Postdoctoral Fellow, Kavli Institute at Cornell for Nanoscale Science, Cornell University
2010 – 2012 Postdoctoral Fellow, Nanoscale Science and Engineering Center, Columbia University
2005 – 2010 Graduate Research Assistant, Department of Physics, Columbia University
AWARD AND HONORS
• Presidential Early Career Awards for Scientists and Engineers, 2019
• ONR Young Investigator Award, 2018
• Alfred Sloan Research Fellowship, 2017
• OCPA Outstanding Young Researcher Award (Macronix Prize), 2016
• David and Lucile Packard Fellowship, 2016
• AFOSR Young Investigator Award, 2016
• DOE Early Career Award, 2015
• Young Scientist Prize in Quantum Electronics, International Union of Pure and Applied Physics (IUPAP), 2013
• Michelson Postdoctoral Prize Lectureship, Case Western Reserve University, 2012
MAIN SCIENTIFIC PUBLICATION
• L. Ma, P. X. Nguyen, Z. Wang, Y. Zeng, K. Watanabe, T. Taniguchi, A. H. MacDonald, K. F. Mak, & J. Shan, “Strongly correlated excitonic insulator in atomic double layers,” arXiv:2104.05066 (2021).
• T. Li, S. Jiang, T. Li, Y. Zhang, K. Kang, J. Zhu, K. Watanabe, T. Taniguchi, D. Chowdhury, L. Fu, J. Shan, & K. F. Mak, “Continuous Mott transition in semiconductor moiré superlattices,” arXiv:2103.09779 (2021).
• C. Jin, Z. Tao, T. Li, Y. Xu, Y. Tang, J. Zhu, S. Liu, K. Watanabe, T. Taniguchi, J. C. Hone, L. Fu, J. Shan, & K. F. Mak, “Stripe phases in WSe2/WS2 moiré superlattices,” Nature Mater. DOI:10.1038/s41563-021-00959-8 (2021).
• C. Jin, Z. Tao, K. Kang, K. Watanabe, T. Taniguchi, K. F. Mak, & J. Shan, “Imaging and control of critical fluctuations in two-dimensional magnets,” Nature Mater. 19, 1290-1294 (2020).
• Y. Xu, S. Liu, D. A. Rhodes, K. Watanabe, T. Taniguchi, J. C. Hone, V. Elser, K. F. Mak, & J. Shan, “Correlated insulating states at fractional fillings of moiré superlattices,” Nature 587, 214-218 (2020).
• Y. Tang, L. Li, T. Li, Y. Xu, S. Liu, K. Barmak, K. Watanabe, T. Taniguchi, A. H. MacDonald, J. Shan, & K. F. Mak, “Simulation of Hubbard model physics in WSe2/WS2 moiré superlattices,” Nature 579, 353-358 (2020).
• Z. Wang, D. A. Rhodes, K. Watanabe, T. Taniguchi, J. C. Hone, J. Shan, & K. F. Mak, “Evidence of high-temperature exciton condensation in 2D atomic double layers,” Nature 574, 76-80 (2019).
• K. Kang, T. Li, E. Sohn, J. Shan, & K. F. Mak, “Nonlinear anomalous Hall effect in few-layer WTe2,” Nature Mater. 18, 324-328 (2019).
• S. Jiang, L. Li, Z. Wang, K. F. Mak, & J. Shan, “Controlling magnetism in 2D CrI3 by electrostatic doping,” Nature Nanotech. 13, 549-553 (2018).
• E. Sohn, X. Xi, W. He, S. Jiang, Z. Wang, K. Kang, J.-H. Park, H. Berger, L. Forró, K. T. Law, J. Shan, & K. F. Mak, “An unusual continuous paramagnetic-limited superconducting phase transition in 2D NbSe2,” Nature Mater. 17, 504-508 (2018).
• S. Jiang, J. Shan, & K. F. Mak, “Electric-field switching of two-dimensional van der Waals magnets,” Nature Mater. 17, 406-410 (2018).
• Z. Wang, J. Shan, & K. F. Mak, “Valley- and spin-polarized Landau levels in monolayer WSe2,” Nature Nanotech. 12, 144-149 (2017).
• J. Lee, K. F. Mak, & J. Shan, “Electrical control of the valley Hall effect in bilayer MoS2 transistors,” Nature Nanotech. 11, 421-425 (2016).
• X. Xi, Z. Wang, W. Zhao, J.-H. Park, K. T. Law, H. Berger, L. Forró, J. Shan, & K. F. Mak, “Ising pairing in superconducting NbSe2 atomic layers,” Nature Phys. 12, 139-143 (2016).
RESEARCH INTERESTS
• Two-dimensional quantum materials and heterostructures
• Spectroscopy
• Exciton physics
• Strong correlation physics
• Berry curvature effects on optical and electrical phenomena
• Magnetism
• Unconventional superconductivity
Shigeo Maruyama
University of Tokyo, Japan
University of Tokyo, Japan
Synthesis and Characterizations of van der Waals Hetero-Nanotubes Based on Single-Walled Carbon Nanotubes
Curriculum VitaeCurriculum Vitae
EDUCATION
1983 Department of Mechanical Engineering, The University of Tokyo, Bachelor of Engineering
1985 Department of Mechanical Engineering, The University of Tokyo, Master of Engineering
1988 Department of Mechanical Engineering, The University of Tokyo, Doctor of Engineering
PROFESSIONAL ACTIVITIES
• 1988-1989 Research Associate, School of Engineering, the University of Tokyo,
• 1989-1991 Visiting Scholar and Visiting Fellow, Department of Chemistry, Rice University
• 1991-1993 Lecturer, School of Engineering, the University of Tokyo,
• 1993-2004 Associate Professor, School of Engineering, the University of Tokyo,
• 2004-2014 Professor, School of Engineering, the University of Tokyo,
• 2014-present Distinguished Professor, School of Engineering, the University of Tokyo
• (2015-2020) Cross-Appointed Fellow, Energy NanoEngineering Lab., AIST
AWARD AND HONORS
• 2019, Fellow of the Royal Society of Chemistry (FRSC)
• 2008, Chemical Physics Letters Most Cited Paper 2003-2007 Award (Elsevier)
• 2007, Fellow, The Japan Society of Mechanical Engineers
• 2006, Thermal Engineering Contribution Award, The Japan Society of Mechanical Engineers
• 2004, Gold Medal, Tokyo Technology Forum 21, for the “development of ACCVD synthesis of SWCNT”
MAIN SCIENTIFIC PUBLICATION
• Y. Feng*, H. Li, T. Inoue, S. Chiashi, S. V. Rotkin, R. Xiang, S. Maruyama*, One-dimensional van der Waals heterojunction diode, ACS Nano, 15, 5600-5609, (2021).
• M. Liu, K. Hisama, Y. Zheng, M. Maruyama, S. Seo, A. Anisimov, T. Inoue, E. I. Kauppinen, S. Okada, S. Chiashi, R. Xiang, S. Maruyama*, Photoluminescence from Single-Walled MoS2 Nanotubes Coaxially Grown on Boron Nitride Nanotubes, ACS Nano, 5, 8418-8426 (2021).
• *R. Xiang, T. Inoue, Y. Zheng, A. Kumamoto, Y. Qian, Y. Sato, M. Liu, D. Tang, D. Gokhale, J. Guo, K. Hisama, S. Yotsumoto, T. Ogamoto, H. Arai, Y. Kobayashi, H. Zhang, B. Hou, A. Anissimov, M. Maruyama, Y. Miyata, S. Okada, S. Chiashi, Y. Li, J. Kong, E. I. Kauppinen, Y. Ikuhara, K. Suenaga, *S. Maruyama, One-dimensional van der Waals heterostructures, Science 367, 537-542 (2020).
• P. Wang, Y. Zheng, *T. Inoue, R. Xiang, A. Shawky, M. Watanabe, A. Anisimov, E. I. Kauppinen, S. Chiashi, *S. Maruyama, Enhanced In-Plane Thermal Conductance of Thin Films Composed of Coaxially Combined Single-Walled Carbon Nanotubes and Boron Nitride Nanotubes, ACS Nano 14, 4298-4305 (2020).
• Y. Qian, *I. Jeon, Y.-L. Ho, C. Lee, S. Jeong and C. Delacou, S. Seo, A. Anisimov, E. I. Kaupinnen, Y. Matsuo, Y. Kang, H.-S. Lee, D. Kim, J.-J. Delaunay, *S. Maruyama, Multifunctional Effect of p-Doping, Anti-Reflection, and Encapsulation by Polymeric Acid for High Efficiency and Stable Carbon Nanotube-based Silicon Solar Cell, Adv. Energy Mater. 10, 1902389 (2020).
• I. Jeon, R. Xiang, A. Shawky, Y. Matsuo, *S. Maruyama, Single-Walled Carbon Nanotubes in Emerging Solar Cells: Synthesis and Electrode Applications, Adv. Energy Mater. 9, 1801312 (2019).
• R. Yoshikawa, K. Hisama, H. Ukai, Y. Takagi, T. Inoue, *S. Chiashi, *S. Maruyama, Molecular Dynamics of Chirality Definable Growth of Single-Walled Carbon Nanotubes, ACS Nano 13, 6506-6512 (2019).
• H. An, A. Kumamoto, *R. Xiang, T. Inoue, S. Chiashi, C. Bichara, A, Loiseau, Y. Li, Y. Ikuhara, *S. Maruyama, Atomic Scale Structural Identification and Evolution of Co-W-C Ternary SWCNT Catalytic Nanoparticles: HR-STEM imaging on SiO2, Sci. Adv. 5, eaat9459 (2019).
• J.-W. Lee, I. Jeon, H. Lin, S. Seo, T.-H. Han, A. Anisimov, E. I. Kauppinen, *Y. Matsuo, *S. Maruyama, *Y. Yang, Vapor-Assisted Ex-Situ Doping of Carbon Nanotube towards Efficient and Stable Perovskite Solar Cells, Nano Lett. 19, 2223-2230 (2019).
• K. Otsuka, S. Yamamoto, *T. Inoue, B. Koyano, H. Ukai, R. Yoshikawa, R. Xiang, S. Chiashi, *S. Maruyama, Digital isotope coding to trace growth process of individual single-walled carbon nanotubes, ACS Nano 12, 3994-4001 (2018).
• K. Otsuka, T. Inoue, E. Maeda, R. Kometani, S. Chiashi, *S. Maruyama, On-chip sorting of long semiconducting carbon nanotubes for multiple transistors along an identical array, ACS Nano 11, 11497-11504 (2017).
RESEARCH INTERESTS
Current research interests include growth, optical characterization, thermal characterization, field effect transistor application and photovoltaic application of carbon nanotubes, one-dimensional heterostructure, and 2D materials.
1983 Department of Mechanical Engineering, The University of Tokyo, Bachelor of Engineering
1985 Department of Mechanical Engineering, The University of Tokyo, Master of Engineering
1988 Department of Mechanical Engineering, The University of Tokyo, Doctor of Engineering
PROFESSIONAL ACTIVITIES
• 1988-1989 Research Associate, School of Engineering, the University of Tokyo,
• 1989-1991 Visiting Scholar and Visiting Fellow, Department of Chemistry, Rice University
• 1991-1993 Lecturer, School of Engineering, the University of Tokyo,
• 1993-2004 Associate Professor, School of Engineering, the University of Tokyo,
• 2004-2014 Professor, School of Engineering, the University of Tokyo,
• 2014-present Distinguished Professor, School of Engineering, the University of Tokyo
• (2015-2020) Cross-Appointed Fellow, Energy NanoEngineering Lab., AIST
AWARD AND HONORS
• 2019, Fellow of the Royal Society of Chemistry (FRSC)
• 2008, Chemical Physics Letters Most Cited Paper 2003-2007 Award (Elsevier)
• 2007, Fellow, The Japan Society of Mechanical Engineers
• 2006, Thermal Engineering Contribution Award, The Japan Society of Mechanical Engineers
• 2004, Gold Medal, Tokyo Technology Forum 21, for the “development of ACCVD synthesis of SWCNT”
MAIN SCIENTIFIC PUBLICATION
• Y. Feng*, H. Li, T. Inoue, S. Chiashi, S. V. Rotkin, R. Xiang, S. Maruyama*, One-dimensional van der Waals heterojunction diode, ACS Nano, 15, 5600-5609, (2021).
• M. Liu, K. Hisama, Y. Zheng, M. Maruyama, S. Seo, A. Anisimov, T. Inoue, E. I. Kauppinen, S. Okada, S. Chiashi, R. Xiang, S. Maruyama*, Photoluminescence from Single-Walled MoS2 Nanotubes Coaxially Grown on Boron Nitride Nanotubes, ACS Nano, 5, 8418-8426 (2021).
• *R. Xiang, T. Inoue, Y. Zheng, A. Kumamoto, Y. Qian, Y. Sato, M. Liu, D. Tang, D. Gokhale, J. Guo, K. Hisama, S. Yotsumoto, T. Ogamoto, H. Arai, Y. Kobayashi, H. Zhang, B. Hou, A. Anissimov, M. Maruyama, Y. Miyata, S. Okada, S. Chiashi, Y. Li, J. Kong, E. I. Kauppinen, Y. Ikuhara, K. Suenaga, *S. Maruyama, One-dimensional van der Waals heterostructures, Science 367, 537-542 (2020).
• P. Wang, Y. Zheng, *T. Inoue, R. Xiang, A. Shawky, M. Watanabe, A. Anisimov, E. I. Kauppinen, S. Chiashi, *S. Maruyama, Enhanced In-Plane Thermal Conductance of Thin Films Composed of Coaxially Combined Single-Walled Carbon Nanotubes and Boron Nitride Nanotubes, ACS Nano 14, 4298-4305 (2020).
• Y. Qian, *I. Jeon, Y.-L. Ho, C. Lee, S. Jeong and C. Delacou, S. Seo, A. Anisimov, E. I. Kaupinnen, Y. Matsuo, Y. Kang, H.-S. Lee, D. Kim, J.-J. Delaunay, *S. Maruyama, Multifunctional Effect of p-Doping, Anti-Reflection, and Encapsulation by Polymeric Acid for High Efficiency and Stable Carbon Nanotube-based Silicon Solar Cell, Adv. Energy Mater. 10, 1902389 (2020).
• I. Jeon, R. Xiang, A. Shawky, Y. Matsuo, *S. Maruyama, Single-Walled Carbon Nanotubes in Emerging Solar Cells: Synthesis and Electrode Applications, Adv. Energy Mater. 9, 1801312 (2019).
• R. Yoshikawa, K. Hisama, H. Ukai, Y. Takagi, T. Inoue, *S. Chiashi, *S. Maruyama, Molecular Dynamics of Chirality Definable Growth of Single-Walled Carbon Nanotubes, ACS Nano 13, 6506-6512 (2019).
• H. An, A. Kumamoto, *R. Xiang, T. Inoue, S. Chiashi, C. Bichara, A, Loiseau, Y. Li, Y. Ikuhara, *S. Maruyama, Atomic Scale Structural Identification and Evolution of Co-W-C Ternary SWCNT Catalytic Nanoparticles: HR-STEM imaging on SiO2, Sci. Adv. 5, eaat9459 (2019).
• J.-W. Lee, I. Jeon, H. Lin, S. Seo, T.-H. Han, A. Anisimov, E. I. Kauppinen, *Y. Matsuo, *S. Maruyama, *Y. Yang, Vapor-Assisted Ex-Situ Doping of Carbon Nanotube towards Efficient and Stable Perovskite Solar Cells, Nano Lett. 19, 2223-2230 (2019).
• K. Otsuka, S. Yamamoto, *T. Inoue, B. Koyano, H. Ukai, R. Yoshikawa, R. Xiang, S. Chiashi, *S. Maruyama, Digital isotope coding to trace growth process of individual single-walled carbon nanotubes, ACS Nano 12, 3994-4001 (2018).
• K. Otsuka, T. Inoue, E. Maeda, R. Kometani, S. Chiashi, *S. Maruyama, On-chip sorting of long semiconducting carbon nanotubes for multiple transistors along an identical array, ACS Nano 11, 11497-11504 (2017).
RESEARCH INTERESTS
Current research interests include growth, optical characterization, thermal characterization, field effect transistor application and photovoltaic application of carbon nanotubes, one-dimensional heterostructure, and 2D materials.
Yoshihiro Iwasa
University of Tokyo, Japan
University of Tokyo, Japan
Update Soon
Curriculum VitaeCurriculum Vitae
EDUCATION
The University of Tokyo, Japan Ph.D Applied Physics 1986
The University of Tokyo, Japan MS Applied Physics 1983
The University of Tokyo, Japan BS Applied Physics 1981
PROFESSIONAL ACTIVITIES
• Team Leader (Concurrently), Center for Emergent Matter Science, RIKEN, Japan (April 2013 to Present)
• Professor, Quantum Phase Electronics Center, The University of Tokyo, Japan (January 2010 to Present)
• Professor, Institute for Materials Research, Tohoku University, Japan (July 2001 to December 2009)
• Associate Professor, School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Japan (April 1994 to June 2001)
• Visiting Scientist, AT&T Bell Laboratories, Murray Hill, New Jersey, USA (October 1993 to March 1994)
• Lecturer, Department of Applied Physic, The University of Tokyo, Japan (November 1991 to March 1994)
• Research Associate, Department of Applied Physic, The University of Tokyo, Japan (April 1986 to November 1991)
AWARD AND HONORS
• Nishina Memorial Prize (December 6, 2019)
• Best Teaching Award, School of Engineering, The University of Tokyo (2017)
• Honda Frontier Prize (May 29, 2015)
• The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology (April 8, 2014)
• Yazaki Science Prize (March 8, 2006)
• Daiwa Adrian Prize (November 25, 2004)
• Japan IBM Science Prize (November 24, 2004)
• Materials Science Research Award (October 31, 2002)
MAIN SCIENTIFIC PUBLICATION
• Gate-controlled BCS-BEC crossover in a two-dimensional superconductor, Y. Nakagawa, Y. Kasahara, T. Nomoto, R. Arita, T. Nojima, and Y. Iwasa, Science 372, 190-195 (2021)
• A van der Waals interface that creates in-plane polarization and a spontaneous photovoltaic effect, T. Akamatsu, T. Ideue, L. Zhou, Y. Dong, S. Kitamura, M. Yoshii, D. Yang, M. Onga, Y. Nakagawa, K. Watanabe, T. Taniguchi, J. Laurienzo, J. Huang, Z. Ye, T. Morimoto, H. T. Yuan, and Y. Iwasa, Science 372, 68-72 (2021).
• Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes, Y. J. Zhang,T. Ideue, M. Onga, F. Qin, R. Suzuki, A. Zak, R. Tenne, J. Smet, and Y. Iwasa, Nature 570, 349-353 (2019).
• Exciton Hall effect in monolayer MoS2, M. Onga, Y. J. Zhang, T. Ideue, and Y. Iwasa. Nature Materials 16, 1193-1197 (2017).
• Highly crystalline 2D superconductors, Y. Saito, T. Nojima and Y. Iwasa, Nature Reviews Materials 2, 16094 (2017).
• Superconductivity protected by spin-valley locking in ion-gated MoS2, Y. Saito, Y. Nakamura, M. S. Bahramy, Y. Kohama, J. T. Ye, Y. Kasahara, Y. Nakagawa, M. Onga, M. Tokunaga, T. Nojima, Y. Yanase, Y. Iwasa, Nature Physics 12, 144-149 (2016).
• Metallic ground state in an ion-gated two-dimensional superconductor, Y. Saito, Y. Kasahara, J. T. Ye, Y. Iwasa, T. Nojima, Science 350, 6259, 409-413 (2015).
• Electrically Switchable Chiral Light-Emitting Transistor, Y. J. Zhang, T. Oka, R. Suzuki, J. T. Ye, Y. Iwasa, Science 344, 725-728 (2014).
• Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry, R. Suzuki, M. Sakano, Y. J. Zhang, R. Akashi, D. Morikawa, A. Harasawa, K. Yaji, K. Kuroda, K. Miyamoto, T. Okuda, K. Ishizaka, R. Arita, Y. Iwasa, Nature Nanotechnology 9, 611-617 (2014).
• Superconducting dome in a gate-tuned band insulator. J. T. Ye, Y. J. Zhang, R. Akashi, M. S. Bahramy, R. Arita, Y. Iwasa, Science 338, 1193-1196 (2012).
• Collective bulk carrier delocalization driven by electrostatic surface charge accumulation. M. Nakano, K. Shibuya, D. Okuyama, T. Hatano, S. Ono, M. Kawasaki, Y. Iwasa, and Y. Tokura, Nature 487, 459-462 (2012).
RESEARCH INTERESTS
• 2D materials and van der Waals heterostructures
• Ionic gating and iontronics
• 2D superconductivity
• Symmetry engineering and nonlinear responses
The University of Tokyo, Japan Ph.D Applied Physics 1986
The University of Tokyo, Japan MS Applied Physics 1983
The University of Tokyo, Japan BS Applied Physics 1981
PROFESSIONAL ACTIVITIES
• Team Leader (Concurrently), Center for Emergent Matter Science, RIKEN, Japan (April 2013 to Present)
• Professor, Quantum Phase Electronics Center, The University of Tokyo, Japan (January 2010 to Present)
• Professor, Institute for Materials Research, Tohoku University, Japan (July 2001 to December 2009)
• Associate Professor, School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), Japan (April 1994 to June 2001)
• Visiting Scientist, AT&T Bell Laboratories, Murray Hill, New Jersey, USA (October 1993 to March 1994)
• Lecturer, Department of Applied Physic, The University of Tokyo, Japan (November 1991 to March 1994)
• Research Associate, Department of Applied Physic, The University of Tokyo, Japan (April 1986 to November 1991)
AWARD AND HONORS
• Nishina Memorial Prize (December 6, 2019)
• Best Teaching Award, School of Engineering, The University of Tokyo (2017)
• Honda Frontier Prize (May 29, 2015)
• The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology (April 8, 2014)
• Yazaki Science Prize (March 8, 2006)
• Daiwa Adrian Prize (November 25, 2004)
• Japan IBM Science Prize (November 24, 2004)
• Materials Science Research Award (October 31, 2002)
MAIN SCIENTIFIC PUBLICATION
• Gate-controlled BCS-BEC crossover in a two-dimensional superconductor, Y. Nakagawa, Y. Kasahara, T. Nomoto, R. Arita, T. Nojima, and Y. Iwasa, Science 372, 190-195 (2021)
• A van der Waals interface that creates in-plane polarization and a spontaneous photovoltaic effect, T. Akamatsu, T. Ideue, L. Zhou, Y. Dong, S. Kitamura, M. Yoshii, D. Yang, M. Onga, Y. Nakagawa, K. Watanabe, T. Taniguchi, J. Laurienzo, J. Huang, Z. Ye, T. Morimoto, H. T. Yuan, and Y. Iwasa, Science 372, 68-72 (2021).
• Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes, Y. J. Zhang,T. Ideue, M. Onga, F. Qin, R. Suzuki, A. Zak, R. Tenne, J. Smet, and Y. Iwasa, Nature 570, 349-353 (2019).
• Exciton Hall effect in monolayer MoS2, M. Onga, Y. J. Zhang, T. Ideue, and Y. Iwasa. Nature Materials 16, 1193-1197 (2017).
• Highly crystalline 2D superconductors, Y. Saito, T. Nojima and Y. Iwasa, Nature Reviews Materials 2, 16094 (2017).
• Superconductivity protected by spin-valley locking in ion-gated MoS2, Y. Saito, Y. Nakamura, M. S. Bahramy, Y. Kohama, J. T. Ye, Y. Kasahara, Y. Nakagawa, M. Onga, M. Tokunaga, T. Nojima, Y. Yanase, Y. Iwasa, Nature Physics 12, 144-149 (2016).
• Metallic ground state in an ion-gated two-dimensional superconductor, Y. Saito, Y. Kasahara, J. T. Ye, Y. Iwasa, T. Nojima, Science 350, 6259, 409-413 (2015).
• Electrically Switchable Chiral Light-Emitting Transistor, Y. J. Zhang, T. Oka, R. Suzuki, J. T. Ye, Y. Iwasa, Science 344, 725-728 (2014).
• Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry, R. Suzuki, M. Sakano, Y. J. Zhang, R. Akashi, D. Morikawa, A. Harasawa, K. Yaji, K. Kuroda, K. Miyamoto, T. Okuda, K. Ishizaka, R. Arita, Y. Iwasa, Nature Nanotechnology 9, 611-617 (2014).
• Superconducting dome in a gate-tuned band insulator. J. T. Ye, Y. J. Zhang, R. Akashi, M. S. Bahramy, R. Arita, Y. Iwasa, Science 338, 1193-1196 (2012).
• Collective bulk carrier delocalization driven by electrostatic surface charge accumulation. M. Nakano, K. Shibuya, D. Okuyama, T. Hatano, S. Ono, M. Kawasaki, Y. Iwasa, and Y. Tokura, Nature 487, 459-462 (2012).
RESEARCH INTERESTS
• 2D materials and van der Waals heterostructures
• Ionic gating and iontronics
• 2D superconductivity
• Symmetry engineering and nonlinear responses